Semiconductor detectors, mixers, and frequency multipliers for the terahertz band

被引：33
作者：
V. G. Bozhkov
机构：
[1] Federal State Enterprise — Research Institute of Semiconductor Devices, Tomsk
来源：
Radiophysics and Quantum Electronics | 2003年 / 46卷 / 8-9期
关键词：
Present Status; Semiconductor Detector; Semiconductor Substrate; Frequency Multiplier; Heterojunction Structure;
D O I：
10.1023/B:RAQE.0000024993.40125.2b
中图分类号：
学科分类号：
摘要：
The state of the art in the development of semiconductor detectors, mixers, and frequency multipliers based on Schottky-barrier diodes (SBDs) and heterojunction structures for uncooled terahertz receivers is reviewed. The present status of this field features a transition from quasi-optical designs based on dot-matrix, whisker-contacted SBDs to the designs with hybrid-integrated and monolithic constructions on the planar SBD base, which are positioned in a waveguide mount. The high-level performance of these planar devices is achieved by partially or completely removing or changing semiconductor substrates and/or using membrane constructions incorporated in the waveguide. © 2003 Plenum Publishing Corporation.
引用
收藏
页码：631 / 656
页数：25
相关论文
共 90 条
[1]  
Sze S.M., Modern Semiconductor Device Physics, (1998)
[2]  
Torrey H.C., Whitmer C.A., Crystal Rectifiers, (1948)
[3]  
Young D.T., Irvin I.C., Proc. IEEE, 53, (1965)
[4]  
Sze S.M., Physics of Semiconductor Devices, (1981)
[5]  
Bozhkov V.G., Radiophys. Quantum Electron., 45, 5, (2002)
[6]  
Copeland J.A., IEEE Trans. Electron. Dev., 17, 5, (1970)
[7]  
Irvin J.C., Pritchett R.L., TIIÉR, 58, 11, (1970)
[8]  
Maas S.A., Microwave Mixers, (1993)
[9]  
Crowe T.W., Int. J. IR MM Waves, 10, 7, (1989)
[10]  
Dickens L.E., IEEE Trans. MTT, 15, 2, (1967)
123456789