Effect of electrostatic discharge on semiconductor devices and subsequent annealing of electrostatic defects

被引：0
|
作者：
M. I. Gorlov
I. V. Vorontsov
A. V. Andreev
机构：
来源：
Measurement Techniques | 1998年 / 41卷
关键词：
Semiconductor Device; Gate Bias; Storage Capacitor; Electrostatic Discharge; Catastrophic Defect;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of electrostatic discharge on semiconductor devices and of subsequent annealing of electrostatic defects by electrical loading and (or) at high temperatures is discussed. The effect of electrostatic discharge has been described in terms of the human body phantom.
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页码：65 / 67
页数：2
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