Modeling of ion-implanted arsenic diffusion in a polysilicon-silicon system

被引：0
|
作者：
Velichko O.I.
Komarov F.F.
Lukanov N.M.
Muchinskij A.N.
Prokhorenko N.L.
Tsurko V.A.
机构：
[1] Belarusian State University,
[2] Scientific-Production Complex “Technological Center”,undefined
[3] Belarusian State University of Information Science and Radioelectronics,undefined
[4] Institute of Mathematics of the National Academy of Sciences of Belarus,undefined
[5] Institute of Technical Cybernetics of the National Academy of Sciences of Belarus,undefined
来源：
Journal of Engineering Physics and Thermophysics | 1997年 / 70卷 / 6期
关键词：
Arsenic; Phase Boundary; Diffusion Equation; Impurity Atom; Polysilicon;
D O I：
10.1007/s10891-997-0053-5
中图分类号：
学科分类号：
摘要：
A model of transfer processes of impurity atoms in a polysilicon-silicon system which describes the segregation of the impurity at the phase boundary is constructed. An algorithm is developed and numerical calculations are made for arsenic diffusion with allowance for a non-uniform defect distribution at the phase boundary.
引用
收藏
页码：1025 / 1032
页数：7
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