Calculation of the size-distribution function for quantum dots at the kinetic stage of growth

被引:0
|
作者
V. G. Dubrovskiĭ
机构
[1] Scientific and Educational Complex of the St. Petersburg Physicotechnical Scientific and Educational Center of the Russian Academy of Sciences,Ioffe Physicotechnical Institute
[2] Russian Academy of Sciences,undefined
来源
Semiconductors | 2006年 / 40卷
关键词
68.65.Hb; 81.10.Aj;
D O I
暂无
中图分类号
学科分类号
摘要
A theoretical model for calculating the distribution of quantum dots in size in the case of growth according to the Stranski-Krastanow mechanism in the lattice-mismatched heteroepitaxial systems is suggested. The model is based on the general theory of the islands’ nucleation at the first-order phase transition, in which situation the role of the metastable phase is played by the overstressed wetting layer, while the elastically stressed three-dimensional islands act as nuclei of the new phase. The suggested model clarifies and generalizes a number of the results reported previously. The theory can be used at the kinetic stage of formation of quantum dots, in which case their ensemble is noninteracting. An example of calculation of the kinetics for formation of hut-shaped clusters in the heteroepitaxial Ge/Si(100) system is given.
引用
收藏
页码:1123 / 1130
页数:7
相关论文
empty
未找到相关数据