Modeling of Shallow Quantum Point Contacts Defined on AlGaAs/GaAs Heterostructures: The Effect of Surface States

被引：0
|
作者：
Fiori G. [1 ]
Iannaccone G. [1 ]
Macucci M. [1 ]
机构：
[1] Dipartimento di Ingegneria dell'Informazione, Università degli studi di Pisa, Via Diotisalvi 2, Pisa
来源：
Journal of Computational Electronics | 2002年 / 1卷 / 1-2期
关键词：
heterostructures; mesoscopic devices; surface states;
D O I：
10.1023/A:1020703425018
中图分类号：
学科分类号：
摘要：
We have developed a program for the simulation of devices defined by electrostatic confinement on the two-dimensional electron gas in AlGaAs/GaAs heterostructures. Our code is based on the self-consistent solution of the Poisson-Schrödinger equation in three dimensions, and can take into account the effects of surface states at the semiconductor-air interface and of discrete impurities in the doped layer. We show results from the simulation of quantum point contacts with different lithographic gaps, whose conductance is computed by means of a code based on the recursive Green's functions formalism. © 2002, Kluwer Academic Publishers.
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页码：39 / 42
页数：3
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