Characterization of Ba(Zr0.05 Ti0.95)O3 thin film prepared by sol-gel process

被引：0
|
作者：
W. X. Cheng
A. L. Ding
X. Y. He
X. S. Zheng
P. S. Qiu
机构：
[1] Shanghai Institute of Ceramics,State Key Lab of High Performance Ceramics and Superfine Microstructure
[2] Chinese Academy of Sciences,undefined
来源：
Journal of Electroceramics | 2006年 / 16卷
关键词：
Ba(Zr; Ti; )O; (BZT) thin film; Sol-gel; Optical properties; Dielectric properties;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Ba(Zr0.05Ti0.95)O3 (BZT) thin film (∼330 nm) was grown on Pt/Ti/SiO2/Si(100) substrate by a simple sol-gel process. The microstructure and the surface morphology of BZT thin film were studied by X-ray diffraction and atomic force microscopy. The optical properties of BZT thin film were obtained by spectroscopic ellipsometry. The optical bandgap was found to be 3.74 eV of direct-transition type. Ferroelectric and dielectric properties of BZT thin film were also discussed. The electrical measurements were conducted on BZT films in metal-ferroelectric-metal (MFM) capacitor configuration. The results showed the film exhibited good ferroelectrity with remanent polarization and coercive electric field of 3.54 μC/cm2 and 95.5 kV/cm, respectively. At 10 kHz, the dielectric constant and dielectric loss of the film are 201 and 0.029, respectively.
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页码：523 / 526
页数：3
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