Dislocation luminescence in GaN single crystals under nanoindentation

被引：0
作者：
Jun Huang
Ke Xu
Ying Min Fan
Jian Feng Wang
Ji Cai Zhang
Guo Qiang Ren
机构：
[1] Suzhou Institute of Nano-tech and Nano-bionics,
[2] CAS,undefined
[3] Suzhou Nanowin Science and Technology Co.,undefined
[4] Ltd.,undefined
来源：
Nanoscale Research Letters | / 9卷
关键词：
GaN; Nanoindentation; Dislocation; Luminescence;
D O I：
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学科分类号：
摘要：
This work presents an experimental study on the dislocation luminescence in GaN by nanoindentation, cathodoluminescence, and Raman. The dislocation luminescence peaking at 3.12 eV exhibits a series of special properties in the cathodoluminescence measurements, and it completely disappears after annealing at 500°C. Raman spectroscopy shows evidence for existence of vacancies in the indented region. A comprehensive investigation encompassing cathodoluminescence, Raman, and annealing experiments allow the assignment of dislocation luminescence to conduction-band-acceptor transition involving Ga vacancies. The nanoscale plasticity of GaN can be better understood by considering the dislocation luminescence mechanism.
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[1]  
Dadgar A(2006)Growth of blue GaN LED structures on 150-mm Si(111) J Crystal Growth 297 279-282
[2]  
Hums C(2004)30-W/mm GaN HEMTs by field plate optimization IEEE Electron Device Lett 25 117-L76
[3]  
Diez A(1996)InGaN-based multi-quantum-well-structure laser diodes Jpn J Appl Phys 35 L74-323
[4]  
Blasing J(2006)Visualizing dislocation nucleation by indenting colloidal crystals Nature 440 319-621
[5]  
Krost A(2005)Quantitative insight into dislocation nucleation from high-temperature nanoindentation experiments Nature Mater 4 617-757
[6]  
Wu YF(2012)Nanoscale anisotropic plastic deformation in single crystal GaN Nanoscale Res Lett 7 150-13
[7]  
Saxler A(2002)Indentation-induced damage in GaN epilayers Appl Phys Lett 80 383-2856
[8]  
Moore M(2002)Indentation of GaN: a study of the optical activity and strain state of extended defects Phys Status Solidi A 192 79-411
[9]  
Smith RP(2011)Dislocation cross-slip in GaN single crystals under nanoindentation Appl Phys Lett 98 221906-119
[10]  
Sheppard S(2008)Cross-sectional transmission electron microscopy observations of structural damage in Al J Appl Phys 103 033503-2005
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