Studying the resolving power of nanosized profiling using focused ion beams

被引：10

作者：

Ageev O.A. ^{[1
]}

Alekseev A.M. ^{[2
]}

Vnukova A.V. ^{[1
]}

Gromov A.L. ^{[1
]}

Kolomiytsev A.S. ^{[1
]}

Konoplev B.G. ^{[1
]}

Lisitsyn S.A. ^{[1
]}

机构：

[1] Department of Electronics and Instrumentation, Southern Federal University, Taganrog, 347928

[2] School of Physics and Astronomy, Kelvin Nanocharacterisation Centre, University of Glasgow, University Avenue, Glasgow

来源：

Nanotechnologies in Russia | 2014年 / 9卷 / 1-2期

关键词：

Substrates - Etching - Industrial research - Focused ion beams;

D O I：

10.1134/S1995078014010029

中图分类号：

学科分类号：

摘要：

The results of experimental studies of the resolving power and accuracy of nanosized profiling using focused ion beams (FIBs) are presented. Dependences of the resolving power on the ion beam current were obtained for the boron-doped (10 ohm cm (100)) silicon substrate during FIB etching. It has been established that the best resolution upon silicon etching determined by the average thickness of the etched line is 15-52 nm and corresponds to ion beam currents of 1-30 nA. It has been shown that the precision in the formation of a topological pattern on the substrate surface increases with the decreasing magnitude of the ion beam current in the range of 0.5 pA to 1 nA, and the relative error in the formation of the nanostructure decreases from 5.10 to 0.07. The results of our research can be used to develop manufacturing processes when creating submicron structures and elements of nanoelectronics and nanosystem technology by using FIB. © 2014 Pleiades Publishing, Ltd.

引用

页码：26 / 30

页数：4

共 9 条

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