Terahertz self-induced oscillations in the injection p-n junction with fixed reverse bias

被引：0

作者：

Lukin K.A. ^{[1
]}

Maksymov P.P. ^{[1
]}

机构：

[1] Usikov Institute of Radiophysics and Electronics, National Academy of Sciences of Ukraine (IRE NASU), Kharkiv

来源：

Radioelectronics and Communications Systems | 2010年 / 53卷 / 08期

关键词：

GaAs; Gallium Arsenide; Dopant Atom; Static Electric Field; Multiplication Layer;

D O I：

10.3103/S0735272710080029

中图分类号：

学科分类号：

摘要：

The results of numerical solutions of the complete equations of the diffusion-drift model (DDM) of Ge, Si and GaAs reverse-biased abrupt p-n junctions with injection of the constant-intensity electron flow into the p-region have been presented. The excitation mechanism of p-n junctions was examined and the factors affecting the frequency and amplitude of self-induced oscillations were established. The spectra of power and electron efficiency have been also presented. Abrupt Ge, Si and GaAs p-n junctions were shown to generate oscillations over the entire microwave range, while the second harmonic frequency could reach the terahertz (THz) range. © Allerton Press, Inc., 2010.

引用

页码：405 / 411

页数：6