XANES Investigations on Electronic Structure and Magnetic Properties of GaFeO3 Nanocrystals

被引:0
|
作者
Aditya Sharma
Mayora Varshney
Tanisha Gautam
Anjali Sharma
Ankush Vij
Ram K. Sharma
Byeong-hyeon Lee
Keun Hwa Chae
Sung Ok Won
机构
[1] Manav Rachna University,Department of Physics
[2] Gautam Buddha University,Department of Applied Physics, School of Vocational and Applied Sciences
[3] University of Petroleum and Energy Studies,Department of Physics
[4] University of Petroleum and Energy Studies,Centre for Interdisciplinary Research and Innovation
[5] Korea Institute of Science and Technology (KIST),Advance Analysis Centre
来源
Journal of Electronic Materials | 2022年 / 51卷
关键词
GaFeO; magnetization; XANES; nanoparticles;
D O I
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中图分类号
学科分类号
摘要
Nanocrystals of GaFeO3 were prepared using co-precipitation followed by thermal annealing at 800 °C for 6 h. The lattice parameters and crystallite size were studied using x-ray diffraction (XRD). Transmission electron microscopy (TEM) measurements were performed to study the size and morphology and revealed the formation of 40–70 nm sized nanoparticles. X-ray absorption near-edge structure measurement was performed to probe the valence state of constituent elements in the GaFeO3 nanocrystals. It has been observed that Fe is present in solely the +3 valence state (i.e., Fe3+). The Ga3+ ions are found with vivid distribution at tetrahedral and octahedral sites and the occupancy of Ga3+ ions is quantitatively evaluated using Ga K-edge XANES spectra. The low-temperature (50 K) M-H loop measurement conveys a ferrimagnetic character of GaFeO3 compound. The paramagnetic behavior is seen at 300 K. The observed magnetic moments per formula unit (~ 1.6 μB) are close to the magnetic moment of Fe3+ ions with a low spin state (t2g5). The abundant Ga3+ ions at the tetrahedral site, as confirmed by Ga K-edge XANES analysis, lead to weak anisotropy in the compound and favor the regular hysteresis loop rather the pinched-like hysteresis loop at 50 K.
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页码:4133 / 4138
页数:5
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