The influence of γ-ray radiation on electrical properties of CuGaSe2

The effect of γ-ray radiation on the conductivity of low-resistivity (1022–104 Ω cm) and high-resistivity (105–107 Ω cm) CuGaSe2 single crystals has been studied in the temperature range 77–330 K. It is found that the resistivity of low-resistivity samples increases as the dose of γ-ray radiation is increased, while the resistivity of high-resistivity samples is practically independent of the radiation dose. It is assumed that a decrease in the conductivity of the low-resistivity samples occurs owing to scattering of free charge carriers at defects (charged centers) formed as a result of irradiation with γ-ray photons. It is found that the dose of the γ-ray irradiation does not affect the temperature dependence of resistivity in the low- and high-resistivity samples in the temperature range 77–300 K.