Visualization of Defects on the Semiconductor Surface Using a Dielectric Barrier Discharge

被引：0

作者：

Sitanov D.V. ^{[1
]}

Pivovarenok S.A. ^{[1
]}

机构：

[1] Ivanovo State University of Chemistry and Technology, Ivanovo

来源：

Russian Microelectronics | 2018年 / 47卷 / 1期

关键词：

D O I：

10.1134/S1063739718010067

中图分类号：

学科分类号：

摘要：

It is demonstrated that plasma techniques can be used to detect various defects on a solid surface by a self-sustained discharge under atmospheric pressure. Special attention is paid to controlling surface defects and the end cleavages of semiconducting wafers and pinholes of layered structures. © 2018, Pleiades Publishing, Ltd.

引用

页码：34 / 39

页数：5

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