Surface Band Tuning of Bi2Te3 Topological Insulator Thin Films by Gas Adsorption

被引：0
作者：
N. Liu
C. Ju
X. M. Cheng
X. S. Miao
机构：
[1] Huazhong University of Science and Technology,School of Optical and Electronic Information
[2] Wuhan National Laboratory for Optoelectronics,undefined
[3] Wuhan National High Magnetic Field Center,undefined
来源：
Journal of Electronic Materials | 2014年 / 43卷
关键词：
Topological insulator; surface band tuning; gas adsorption; Dirac cone;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The surface band tuning of the topological insulator Bi2Te3 by gas adsorption is investigated on the basis of ab␣initio calculations. It is shown that, with the increase of Te vacancies, the topologically non-trivial surface state which originates from the second quintuple layer coexists with the topologically trivial surface. Molecular dynamics simulation reveals that O2 and NO2 easily occupy the Te vacancy sites and further bind to the Bi atoms from the second atomic layer. Moreover, the surface band with the Dirac cone is observed. Our results suggest that the topological surface state can be effectively regulated by NO2 and O2 adsorption.
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页码：3105 / 3109
页数：4
相关论文
共 136 条
[1]  
Qi XL(2010)undefined Phys. Today 63 33-undefined
[2]  
Zhang SC(2010)undefined Nature 464 194-undefined
[3]  
Moore JE(2010)undefined Rev. Mod. Phys. 82 3045-undefined
[4]  
Hasan MZ(2008)undefined Phys. Rev. Lett. 100 096407-undefined
[5]  
Kane CL(2009)undefined Science 323 1184-undefined
[6]  
Fu L(2009)undefined Nat. Phys. 5 438-undefined
[7]  
Kane CL(2009)undefined Nature 460 1101-undefined
[8]  
Qi XL(2009)undefined Science 325 178-undefined
[9]  
Li R(2009)undefined Phys. Rev. Lett. 103 246601-undefined
[10]  
Zhang J(2009)undefined Phys. Rev. B 79 195208-undefined
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