Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers

被引：0
|
作者：
S. V. Ivanov
A. A. Toropov
S. V. Sorokin
T. V. Shubina
N. D. Il’inskaya
A. V. Lebedev
I. V. Sedova
P. S. Kop’ev
Zh. I. Alferov
H. -J. Lugauer
G. Reuscher
M. Keim
F. Fischer
A. Waag
G. Landwehr
机构：
[1] Russian Academy of Sciences,A.F. Ioffe Physicotechnical Institute
[2] Universität Würzburg,Physikalisches Institut
来源：
Semiconductors | 1998年 / 32卷
关键词：
Magnetic Material; Laser Diode; Molecular Beam Epitaxy; Electromagnetism; Molecular Beam;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
High-quality ZnSe-based heterostructures are grown by uninterrupted molecular beam epitaxy using the concept of strain compensation and alternating-strain multilayers. To verify the advantages of this technique, optically pumped ZnSSe/ZnCdSe laser structures containing short-period superlattices or multiple quantum wells have been grown and studied. A room-temperature injection laser diode with a BeZnSe/ZnSe superlattice waveguide is described.
引用
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页码：1137 / 1140
页数：3
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