Ferroelectric properties of Ce3+- doped Aurivillius K0.5Bi4.5Ti4O15 thin films

The effect of Ce3+-ion doping on the structural, electrical and ferroelectric properties of the Aurivillius K0.5Bi4.5Ti4O15 thin films are reported. For the purpose of this study, K0.5Bi4.5Ti4O15 and K0.5Bi4.0Ce0.5Ti4O15 thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by using chemical solution deposition method. Formation of the Aurivillius structure was confirmed through X-ray diffraction and Raman scattering studies. From the experimental results, tremendous improvements in the electrical and the ferroelectric properties were observed for the K0.5Bi4.0Ce0.5Ti4O15 thin film. The ferroelectric polarization-electric field (P-E) hysteresis loops study showed a largely enhanced remnant polarization (2Pr), with a value of 52.8 μC/cm2 for the K0.5Bi4.0Ce0.5Ti4O15 thin film measured at an applied electric field of 595 kV/cm. Furthermore, a low leakage current density value of 1.38×10−8 A/cm2 was measured at an applied electric field of 100 kV/cm for the K0.5Bi4.0Ce0.5Ti4O15 thin film.