Modeling InAs quantum-dot formation on the side surface of GaAs nanowires

被引：0

作者：

A. D. Bolshakov

V. G. Dubrovskii

Xin Yan

Xia Zhang

Xiaomin Ren

机构：

[1] Russian Academy of Sciences,St. Petersburg Academic University, Nanotechnology Research and Education Center

[2] Russian Academy of Sciences,Ioffe Physical Technical Institute

[3] Beijing University of Posts and Telecommunications,State Key Laboratory of Information Photonics and Optical Communications

来源：

Technical Physics Letters | 2013年 / 39卷

关键词：

GaAs; Technical Physic Letter; Side Surface; Critical Thickness; Critical Layer Thickness;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have theoretically studied the formation of InAs quantum dots (QDs) on the side surface of GaAs nanowires (NWs). The effective energies of formation of a thin InAs layer and QDs on the NW side surface are compared with allowance for elastic stresses at the radial heteroboundary of two materials with lattice mismatch. The concept of a critical thickness of the external (wetting) layer is introduced, at which the mechanical stresses stimulate three-dimensional growth of QDs. The dependence of the critical layer thickness on the NW diameter and elastic constants of the system is determined. The phenomenon of partial filling of the NW side surface by QDs is explained by a decrease in the thickness of a deposited InAs layer with increasing height. The results of modeling agree well with the available experimental data.

引用

页码：1047 / 1052

页数：5

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