The Thickness-Dependent In-Plane Uniaxial Magnetic Anisotropy in Amorphous CoFeB Films on GaAs(001) Substrates

被引：0

作者：

Hongqing Tu

Biao You

Yuan Gao

Ji Wang

Xuezhong Ruan

Jun Du

机构：

[1] Nanjing University,National Laboratory of Solid State Microstructures and Department of Physics

[2] Nanjing Institute of Technology,Department of Mathematics and Physics

[3] Nanjing University,School of Electronic Science and Engineering

[4] Collaborative Innovation Center of Advanced Microstructures,undefined

来源：

Journal of Superconductivity and Novel Magnetism | 2016年 / 29卷

关键词：

Uniaxial magnetic anisotropy; Magnetization reversal; Coherent rotation; Domain wall pinning;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In-plane uniaxial magnetic anisotropy (UMA) has been studied on a series of amorphous Co 56Fe 24B20 (CoFeB) films deposited on GaAs(001) substrates. With the increasing of the CoFeB thickness from 3.5 to 20.0 nm, it was found that a large uniaxial anisotropy field (Hk) of about 270 Oe decreases monotonically to a relatively small value of about 100 Oe. The thickness dependence of Hk coincides with the common interface-induced UMA model. The magnetization reversal processes of this series of CoFeB films were also investigated. The evolution of the thickness-dependent magnetization reversal mechanisms was briefly discussed in terms of the Stoner-Wohlfarth model, the pinning of domain wall model, and the modified Kondorsky model.

引用

页码：2843 / 2848

页数：5

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