Effects of weak localization and electron-electron interaction in GaAs-AlGaAs heterostructures

被引：0

作者：

Bumai Yu.A. ^{[1
]}

Lukashevich M.G. ^{[2
]}

Skripka D.A. ^{[2
]}

Gobsch G. ^{[3
]}

Goldhahn R. ^{[3
]}

Stein N. ^{[3
]}

机构：

[1] Belarusian Natl. Tech. University, Minsk

[2] Belarusian State University, Minsk, 220050

来源：

Journal of Applied Spectroscopy | 2004年 / 71卷 / 1期

关键词：

Gallium arsenide; Heterojunction; Magnetoresistance; Quantum Hall effect; Weak localization;

D O I：

10.1023/B:JAPS.0000025352.22911.73

中图分类号：

学科分类号：

摘要：

The influence of the processes of weak localization and electron-electron interaction in an inhomogeneous two-dimensional electron gas of a single GaAs-AlGaAs heterojunction on the low-temperature transport characteristics in the case of occupation of two quantum subbands has been investigated. The transport characteristics have been interpreted from the viewpoint of a two-layer model taking into account the existence of two bypass conduction channels corresponding to the two-dimensional and three-dimensional electron gas. Both the electrical and optical measurements point to the existence of large-scale fluctuations of the potential, which determine the dependence of the conduction and the Hall resistance of the heterostructures on the magnetic field. It has been established that the weak localization determines the charge transport in a weak magnetic field, and the electron-electron interaction determines this transport in a strong magnetic field.

引用

页码：77 / 82

页数：5

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