Investigation of anodic sulfidizaiton passivation of InAs/GaSb Type-II superlattice infrared detector

被引：0

作者：

Junbin Li

Xuchang Zhou

Dongsheng Li

Yingchun Mu

Haipeng Wang

Shuren Cong

Yang Ren

Jin Yang

Chao Chang

Wen Yang

Yanhui Li

Jincheng Kong

机构：

[1] Kunming Institute of Physics,

来源：

Optical and Quantum Electronics | 2021年 / 53卷

关键词：

Electrochemistry anodic sulfidization; Passivation; Infrared detector; XPS; Type-II superlattice;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The composition of anodic sulfidization layers of GaSb and InAs, prepared by electrochemistry anodic sulfidization, are investigated by X-ray photoelectron spectroscopy (XPS). The result of composition profile of GaSb anodic sulfidization samples, studied by XPS and Ar + etching, indicates that the anodic sulfidization layers contains not only sulfide, but also oxides and oxysulfide. The oxide/oxysulfide is sandwiched by sulfide layer and GaSb. While for the InAs anodic sulfidization sample, the whole anodic sulfidization layer of InAs is composed of oxysulfide and oxide. The oxide is sandwiched by oxysulfide layer and InAs. Moreover, long-wave InAs/GaSb superlattice IR detectors are fabricated to confirm the effect of anodic sulfidization layer on reduction the leakage current. The current–voltage (I-V) result indicates that the dark current of detector with anodic sulfidization layer is more than three orders of magnitude lower than that of without anodic sulfidization layer.

引用

共 50 条

[41] Development status of Type-II superlattice infrared detector in JAXA [J].

Sakai, Michito ;

Murooka, Junpei ;

Kumeta, Ayaka ;

Katayama, Haruyoshi ;

Kimura, Toshiyoshi ;

Inada, Hiroshi ;

Iguchi, Yasuhiro ;

Hiroe, Yuta ;

Kimata, Masafumi .

OPTICAL SENSING, IMAGING, AND PHOTON COUNTING: NANOSTRUCTURED DEVICES AND APPLICATIONS 2016, 2016, 9933

[42] Dual color longwave InAs/GaSb type-II strained layer superlattice detectors [J].

Plis, E. ;

Myers, S. ;

Ramirez, D. ;

Smith, E. P. ;

Rhiger, D. ;

Chen, C. ;

Phillips, J. D. ;

Krishna, S. .

INFRARED PHYSICS & TECHNOLOGY, 2015, 70 :93-98

[43] Advances on photoconductive InAs/GaSb type-II superlattice long-wavelength infrared detectors for high operating temperature [J].

Mueller, Raphael ;

Niemasz, Jasmin ;

Daumer, Volker ;

Janaszek, Andrzej ;

Jurenczyk, Jaroslaw ;

Rehm, Robert .

OPTICAL COMPONENTS AND MATERIALS XVI, 2019, 10914

[44] Research progress of barrier InAs/InAsSb type-II superlattice infrared detectors (invited) [J].

Zhang C. ;

Liu Y. ;

Gong M. ;

Liu B. ;

Gong R. ;

Liu J. ;

An H. ;

Zhang D. ;

Zheng X. ;

Lu L. ;

Feng Y. ;

Zhu L. .

Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2022, 51 (12)

[45] A comprehensive set of simulation tools to model and design high performance Type-II InAs/GaSb superlattice infrared detectors [J].

Delmas, M. ;

Liang, B. L. ;

Huffaker, D. L. .

QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XVI, 2019, 10926

[46] Quantum-engineered mid-infrared type-II InAs/GaSb superlattice photodetectors for high temperature operations [J].

Tian, Z. -B. ;

Schuler-Sandy, T. ;

Godoy, S. E. ;

Kim, H. S. ;

Montoya, J. ;

Myers, S. ;

Klein, B. ;

Plis, E. ;

Krishna, S. .

INFRARED TECHNOLOGY AND APPLICATIONS XXXIX, 2013, 8704

[47] The emergence of InAs/InAsSb type-II strained layer superlattice barrier infrared detectors [J].

Ting, David Z. ;

Soibel, Alexander ;

Khoshakhlagh, Arezou ;

Keo, Sam A. ;

Rafol, B. ;

Fisher, Anita M. ;

Hill, Cory J. ;

Luong, Edward M. ;

Pepper, Brian J. ;

Gunapala, Sarath D. .

INFRARED TECHNOLOGY AND APPLICATIONS XLV, 2019, 11002

[48] Thermal Conductivity of InAs/GaSb Type II Superlattice [J].

Chuanle Zhou ;

B. -M. Nguyen ;

M. Razeghi ;

M. Grayson .

Journal of Electronic Materials, 2012, 41 :2322-2325

[49] Modeling InAs/GaSb and InAs/InAsSb Superlattice Infrared Detectors [J].

P. C. Klipstein ;

Y. Livneh ;

A. Glozman ;

S. Grossman ;

O. Klin ;

N. Snapi ;

E. Weiss .

Journal of Electronic Materials, 2014, 43 :2984-2990

[50] Thermal Conductivity of InAs/GaSb Type II Superlattice [J].

Zhou, Chuanle ;

Nguyen, B. -M. ;

Razeghi, M. ;

Grayson, M. .

JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (09) :2322-2325

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