Observation of a long-range action effect in ion-bombarded GaAs transistor structures

被引：0
作者：
S. V. Obolenskii
V. D. Skupov
A. G. Fefelov
机构：
[1] N. I. Lobachevskii State University,
来源：
Technical Physics Letters | 1999年 / 25卷
关键词：
Argon; GaAs; Carrier Concentration; Active Layer; Action Effect;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Changes in the carrier concentration and mobility in the active layers of Schottky-barrier field-effect transistors are observed when the structures are bombarded with argon ions on the nonworking side of the GaAs substrate.
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页码：655 / 656
页数：1
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[7]  
Skupov V. D.(undefined)undefined undefined undefined undefined-undefined
[8]  
Tetel’baum D. I.(undefined)undefined undefined undefined undefined-undefined
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Shengurov V. G.(undefined)undefined undefined undefined undefined-undefined
[10]  
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