Mechanism for the Formation of a Solid Solution of Carbon in Silicon Carbide

被引：0
|
作者：
Nikolai F. Gadzyra
Georgii G. Gnesin
机构：
[1] National Academy of Sciences of Ukraine,Institute for Problems of Materials Science
来源：
Powder Metallurgy and Metal Ceramics | 2001年 / 40卷
关键词：
silicon carbide; solid solution of carbon; thermally expanded graphite; thermally exfoliated graphite; chemical transport reactions; self-propagating high-temperature synthesis;
D O I：
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中图分类号：
学科分类号：
摘要：
We consider a mechanism for the formation of a solid solution of carbon in silicon carbide when various carbide synthesis methods are used that involve participation of thermally expanded (exfoliated) graphite. We have determined the role of chemical transport reactions in processes of solid-phase interaction between the components of the synthesis. We have optimized the conditions for synthesis of a powder of a solid solution of carbon in silicon carbide with participation of thermally expanded graphite.
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页码：519 / 525
页数：6
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