Polycrystalline VO2 thin films via femtosecond laser processing of amorphous VOx

被引：0
作者：
N. A. Charipar
H. Kim
E. Breckenfeld
K. M. Charipar
S. A. Mathews
A. Piqué
机构：
[1] Naval Research Laboratory,Materials Science and Technology Division
[2] National Research Council Fellow at the Naval Research Laboratory,undefined
来源：
Applied Physics A | 2016年 / 122卷
关键词：
Femtosecond Laser; Vanadium Oxide; Insulator Transition; Vanadium Dioxide; Insulator Phase Transition;
D O I：
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学科分类号：
摘要：
Femtosecond laser processing of pulsed laser-deposited amorphous vanadium oxide thin films was investigated. Polycrystalline VO2 thin films were achieved by femtosecond laser processing in air at room temperature. The electrical transport properties, crystal structure, surface morphology, and optical properties were characterized. The laser-processed films exhibited a metal–insulator phase transition characteristic of VO2, thus presenting a pathway for the growth of crystalline vanadium dioxide films on low-temperature substrates.
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