Polycrystalline VO2 thin films via femtosecond laser processing of amorphous VOx

被引：0
作者：
N. A. Charipar
H. Kim
E. Breckenfeld
K. M. Charipar
S. A. Mathews
A. Piqué
机构：
[1] Naval Research Laboratory,Materials Science and Technology Division
[2] National Research Council Fellow at the Naval Research Laboratory,undefined
来源：
Applied Physics A | 2016年 / 122卷
关键词：
Femtosecond Laser; Vanadium Oxide; Insulator Transition; Vanadium Dioxide; Insulator Phase Transition;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Femtosecond laser processing of pulsed laser-deposited amorphous vanadium oxide thin films was investigated. Polycrystalline VO2 thin films were achieved by femtosecond laser processing in air at room temperature. The electrical transport properties, crystal structure, surface morphology, and optical properties were characterized. The laser-processed films exhibited a metal–insulator phase transition characteristic of VO2, thus presenting a pathway for the growth of crystalline vanadium dioxide films on low-temperature substrates.
引用
收藏
相关论文
共 77 条
  • [1] Goodenough JB(1971)undefined J. Solid State Chem. 3 490-500
  • [2] Kim H(2015)undefined Thin Solid Films 596 45-50
  • [3] Charipar N(2016)undefined AIP Adv. 6 015113-322
  • [4] Breckenfeld E(2003)undefined Phys. Rev. B 68 024109-806
  • [5] Rosenberg A(1967)undefined Appl. Phys. Lett. 10 199-108
  • [6] Piqué A(1993)undefined Appl. Phys. Lett. 63 3288-2646
  • [7] Charipar NA(1988)undefined Thin Solid Films 165 317-76
  • [8] Kim H(1991)undefined J. Appl. Phys. 70 443-805
  • [9] Mathews SA(1975)undefined J. Appl. Phys. 46 2111-undefined
  • [10] Piqué A(2013)undefined J. Appl. Phys. 114 113509-undefined
12345678