Nanotube structures: material characterization and structural analysis of Ge–Se thin films

被引:0
|
作者
Muhammad R. Latif
Dmitri A. Tenne
Maria Mitkova
机构
[1] Boise State University,Department of Electrical and Computer Engineering
[2] Boise State University,Department of Physics
来源
Journal of Materials Science: Materials in Electronics | 2019年 / 30卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Nanotube structures, formed in thin films of chalcogenide glasses open avenues for new applications, since they offer directional options for many effects in these otherwise completely disordered systems. One way to grow nanotubes is through formation of nano-columnar structures by confining them. In this work nano-columnar growth of thermally evaporated GexSe100−x (x = 20, 30, 40) films is achieved through oblique films deposition. The columnar structural organization of the films and its dependence upon the deposition angle and films composition are established by imaging the cross-sectional areas of the films through scanning electron microscopy. Atomic force microscopy, energy dispersive X-ray spectroscopy and Raman Spectroscopy studies reveal respectively variation in the surface porosity, composition changes and structural reorganizations occurring in the films as a function of obliqueness angles and material’s composition. These results are discussed in respect to the structural organization of films deposited under normal flux incidence and deformations and other structural effects caused by films' deposition under variable angles. Based on the experimental results an empirical formula for the tangent rule is suggested which links the incident flux angle α, and the nanotube inclination angle β.
引用
收藏
页码:2470 / 2478
页数:8
相关论文
共 50 条
  • [1] Nanotube structures: material characterization and structural analysis of Ge-Se thin films
    Latif, Muhammad R.
    Tenne, Dmitri A.
    Mitkova, Maria
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (03) : 2470 - 2478
  • [2] Physical characterization of Ge–Zn–Se thin films
    Awad A. Ibraheem
    Kamal A. Aly
    Journal of Materials Science: Materials in Electronics, 2022, 33 : 26905 - 26914
  • [3] Physical characterization of Ge-Zn-Se thin films
    Ibraheem, Awad A.
    Aly, Kamal A.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2022, 33 (36) : 26905 - 26914
  • [4] Thin Ge-Se films as a sensing material for radiation doses
    Ailavajhala, Mahesh S.
    Nichol, Tyler
    Gonzalez-Velo, Yago
    Poweleit, Christian D.
    Barnaby, Hugh J.
    Kozicki, Michael N.
    Butt, Darryl P.
    Mitkova, Maria
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2014, 251 (07): : 1347 - 1353
  • [5] Structural characterization of Zn-In-Se thin films
    Gullu, H. H.
    Parlak, M.
    MODERN PHYSICS LETTERS B, 2017, 31 (05):
  • [6] Optical and structural properties of Ge-Se bulk glasses and Ag-Ge-Se thin films
    Orava, J.
    Kohoutek, T.
    Wagner, T.
    Cerna, Z.
    Vlcek, Mil.
    Benes, L.
    Frumarova, B.
    Frumar, M.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2009, 355 (37-42) : 1951 - 1954
  • [7] Growth,Structural and Optical Characterization of Se75Te17Ge8 Thin Films
    SALIM S M
    LAHMAR A
    ZAYIED H
    SALEM A M
    SAKR G B
    BARROY P
    TELEB N
    EL MARSSI M
    JournaloftheChineseCeramicSociety, 2015, 2 (02) : 98 - 102
  • [8] Synthesis, analysis, and characterization of structural and optical properties of thermally evaporated chalcogenide a-Cu-Zn-Ge-Se thin films
    Hassanien, Ahmed Saeed
    Sharma, Ishu
    MATERIALS CHEMISTRY AND PHYSICS, 2024, 311
  • [9] Structural characterization of thin films and multilayer structures
    Temst, K
    VanBael, MJ
    Baert, M
    Rosseel, E
    Bruyndoncx, V
    Strunk, C
    Verbanck, G
    Mae, K
    VanHaesendonck, C
    Moshchalkov, VV
    Bruynseraede, Y
    Jonckheere, R
    deGroot, DG
    Koeman, N
    Griessen, R
    JOURNAL DE PHYSIQUE IV, 1996, 6 (C3): : 265 - 270
  • [10] Structural characterization of thin films and multilayer structures
    Katholieke Universiteit Leuven, Leuven, Belgium
    J Phy IV JP, 3 (265-270):