Structural, ferroelectric, and magnetic properties of room-temperature magnetodielectric GaFeO3

被引:0
|
作者
Ranajit Dey
Sameer Pradhan
P. K. Bajpai
机构
[1] Guru Ghasidas Vishwavidyalaya,Pure and Applied Physics
[2] Dumkal College,undefined
来源
Journal of Materials Science: Materials in Electronics | 2023年 / 34卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Polycrystalline GaFeO3 (GFO) samples were prepared through sol–gel method and sintered at 700 ∘C\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$^\circ{\text{C}}$$\end{document}. The ceramics GFO crystallize in orthorhombic polar Pc21n symmetry as observed from FULLPROF profile fitting of XRD data. The Field Effect SEM results confirmed the average particle size ∼\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\sim$$\end{document} 25 nm with some porosity. Ferroelectric hysteresis loop reflecting a leaky nature was obtained at T < 350 K. The value of saturated polarization Ps, remnant polarization Pr, and coercive field Ec measured from P–E loop were 1.5 μC/cm2, 0.25 μC/cm2, and 0.50 kV/cm, respectively, at room temperature. In Raman spectrum analysis, no significant spin–phonon coupling indications near magnetic transition temperature were recorded. Temperature-dependent magnetic properties analyzed at zero field cooled and field cooled studies over temperature range of 350 K to 150 K infer that the material exhibited super-paramagnetic state at and above 297 K applicable in microwave devices, and magnetic Curie temperature value Tc increased from 220 to 315 K with decreasing particle size. Decrease in remnant magnetization Mr and increase in Ms/Mr value at room temperature were also observed in M–H hysteresis loop confirming the super-paramagnetic state of the material.
引用
收藏
相关论文
共 50 条
  • [1] Structural, ferroelectric, and magnetic properties of room-temperature magnetodielectric GaFeO3
    Dey, Ranajit
    Pradhan, Sameer
    Bajpai, P. K.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2023, 34 (03)
  • [2] Enhanced ferroelectric and ferrimagnetism properties at room temperature in BaTiO3 doped GaFeO3 ceramics
    Zhang, C.
    Lv, Z. L.
    Wu, J. K.
    Miao, Jun
    Xu, X. G.
    Li, Qiang
    Lin, K.
    Chen, X.
    Li, X. H.
    Cao, Y. L.
    Deng, J. X.
    Xing, X. R.
    CHEMICAL PHYSICS LETTERS, 2023, 813
  • [3] Electrical, magnetic, magnetodielectric, and magnetoabsorption studies in multiferroic GaFeO3
    Naik, V. B.
    Mahendiran, R.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (12)
  • [4] Effect of Mn doping on structural and magnetic properties of GaFeO3
    Mohamed, M. Bakr
    Fuess, H.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2011, 323 (15) : 2090 - 2094
  • [5] Dielectric, ferroelectric, magnetic and electrical properties of Sm-doped GaFeO3
    Khusboo Agrawal
    Banarji Behera
    S. C. Sahoo
    S. K. Rout
    Ashok Kumar
    Dhiren K. Pradhan
    Piyush R. Das
    Applied Physics A, 2022, 128
  • [6] Dielectric, ferroelectric, magnetic and electrical properties of Sm-doped GaFeO3
    Agrawal, Khusboo
    Behera, Banarji
    Sahoo, S. C.
    Rout, S. K.
    Kumar, Ashok
    Pradhan, Dhiren K.
    Das, Piyush R.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2022, 128 (02):
  • [7] Magnetic properties of Single Crystal GaFeO3
    Tachiyama, Koh
    Yasui, Shintaro
    Rao, Badari Narayana Aroor
    Dazai, Takuro
    Usami, Takamasa
    Taniyama, Tomoyasu
    Katayama, Tsukasa
    Hamasaki, Yosuke
    Yu, Jianding
    He, Huan
    Wang, Hui
    Itoh, Mitsuru
    MRS ADVANCES, 2019, 4 (01) : 61 - 66
  • [8] Structural, magnetic and vibrational properties of multiferroic GaFeO3 at high pressure
    Golosova, N. O.
    Kozlenko, D. P.
    Kichanov, S. E.
    Lukin, E. V.
    Dubrovinsky, L. S.
    Mammadov, A. I.
    Mehdiyeva, R. Z.
    Jabarov, S. H.
    Liermann, H. -P.
    Glazyrin, K. V.
    Dang, T. N.
    Smotrakov, V. G.
    Eremkin, V. V.
    Savenko, B. N.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 684 : 352 - 358
  • [9] Room-temperature multiferroicity in GaFeO3 thin film grown on (100)Si substrate
    Goswami, Sudipta
    Mishra, Shubhankar
    Dana, Kausik
    Mandal, Ashok Kumar
    Dey, Nitai
    Pal, Prabir
    Satpati, Biswarup
    Mukhopadhyay, Mrinmay
    Ghosh, Chandan Kumar
    Bhattacharya, Dipten
    JOURNAL OF APPLIED PHYSICS, 2022, 132 (21)
  • [10] Effect of Ti doping on the structural, electrical and magnetic properties of GaFeO3
    S. Sen
    N. Chakraborty
    P. Rana
    R. Sahu
    S. Singh
    A. K. Panda
    S. Tripathy
    D. K. Pradhan
    A. Sen
    Journal of Materials Science: Materials in Electronics, 2016, 27 : 4647 - 4652