Accurate modelling of InGaN quantum wells

被引：0

作者：

Hans Wenzel

机构：

[1] Ferdinand–Braun–Institut für Höchstfrequenztechnik,

来源：

Optical and Quantum Electronics | 2006年 / 38卷

关键词：

GaN; InGaN quantum wells; semiconductor lasers; piezoelectric polarisation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The internal field, the band structure and the oscillator strengths of the optical transitions of wurtzite strained InGaN quantum wells are accurately computed by a self-consistent solution of the Poisson equation and an eight-band k · p Schrödinger equation taking into account charges due to polarisation fields, doping and free carriers. The results are used to compare luminescence and gain spectra for single and triple quantum well structures and to elucidate the effect of the polarisation fields.

引用

页码：953 / 961

页数：8