Nonlinear boundary value problems describing mobile carrier transport in semiconductor devices

被引：0
|
作者：
Borevich E.Z. [1 ]
Chistyakov V.M. [2 ]
机构：
[1] Department of Mathematics, St.-Petersburg Electrotechnical U., 197376 St.-Petersburg
[2] Department of Mathematics, St.-Petersburg Technical University, 195251 St.-Petersburg
来源：
Applications of Mathematics | 2001年 / 46卷 / 05期
关键词：
Asymptotic behaviour of solutions; Carrier transport; Constant densities of ionized impurities; Interior transition layer phenomena; Nonlinear boundary value problem; Semiconductors;
D O I：
10.1023/A:1013708427592
中图分类号：
学科分类号：
摘要：
The present paper describes mobile carrier transport in semiconductor devices with constant densities of ionized impurities. For this purpose we use one-dimensional partial differential equations. The work gives the proofs of global existence of solutions of systems of such kind, their bifurcations and their stability under the corresponding assumptions.
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页码：383 / 400
页数：17
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