Suppression of parasitic backgating by hydrogenation of ion-doped gallium arsenide structures

被引：0
作者：
V. A. Kagadei
Yu. V. Lilenko
L. S. Shirokova
D. I. Proskurovskii
机构：
[1] State Scientific-Industrial Organization “Research Institute of Semiconductor Devices”,Institute of High
[2] Siberian Branch of the Russian Academy of Sciences,Current Electronics
来源：
Technical Physics Letters | 1999年 / 25卷
关键词：
Hydrogenation; Gallium; Arsenide; Gallium Arsenide; Deep Center;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
It has been established that hydrogenation of ion-doped gallium arsenide structures can be used to suppress parasitic backgating. Curves describing the degree of suppression of the backgating as a function of the hydrogenation regimes are given. The observed dependence is evidently caused by the formation and decay of hydrogen complexes with deep centers.
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页码：522 / 523
页数：1
相关论文
共 21 条
[1]  
Lee M.(1990)undefined IEEE Trans. Electron Devices ED-37 2148-undefined
[2]  
Forbes L.(1990)undefined IEEE Trans. Electron Devices ED-37 1821-undefined
[3]  
Goto N.(1990)undefined IEEE J. Solid-State Circuits 25 1544-undefined
[4]  
Ohno Y.(1988)undefined Annu. Rev. Mater. Sci. 18 219-undefined
[5]  
Yano H.(1998)undefined J. Vac. Sci. Technol. A 16 2556-undefined
[6]  
Allstot D. J.(1998)undefined Mikroelektronika 27 10-undefined
[7]  
Canfield P. C.(1997)undefined Inst. Phys. Conf. Ser. 160 487-undefined
[8]  
Chevallier J.(1987)undefined Fiz. Tekh. Poluprovodn. 21 842-undefined
[9]  
Aucouturier M.(undefined)undefined undefined undefined undefined-undefined
[10]  
Kagadei V. A.(undefined)undefined undefined undefined undefined-undefined
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