Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection

被引：0

作者：

D. De Salvador

A. Coati

E. Napolitani

M. Berti

A.V. Drigo

M.S. Carroll

J.C. Sturm

J. Stangl

G. Bauer

L. Lazzarini

机构：

[1] INFM and Dipartimento di Fisica,

[2] via Marzolo 8,undefined

[3] 35131 Padova,undefined

[4] Italy,undefined

[5] Department of Electrical Engineering,undefined

[6] Princeton University,undefined

[7] Princeton,undefined

[8] NJ 08544,undefined

[9] USA,undefined

[10] Institute for Semiconductor Physics,undefined

[11] Johannes-Kepler University Linz,undefined

[12] Linz,undefined

[13] Austria,undefined

[14] CNR-MASPEC,undefined

[15] Parco Area delle Scienze 37/A,undefined

[16] 43010 Fontanini,undefined

[17] Parma,undefined

[18] Italy,undefined

来源：

Applied Physics A | 2002年 / 75卷

关键词：

PACS: 66.30.Jt; 61.72.Cc; 68.35.Dv;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In this work we investigate the diffusion and precipitation of supersaturated substitutional carbon in 200-nm-thick SiGeC layers buried under a silicon cap layer of 40 nm. The samples were annealed in either inert (N2) or oxidizing (O2) ambient at 850 °C for times ranging from 2 to 10 h. The silicon self-interstitial (I) flux coming from the surface under oxidation enhances the C diffusion with respect to the N2-annealed samples. In the early stages of the oxidation process, the loss of C from the SiGeC layer by diffusion across the layer/cap interface dominates. This phenomenon saturates after an initial period (2–4 h), which depends on the C concentration. This saturation is due to the formation and growth of C-containing precipitates that are promoted by the I injection and act as a sink for mobile C atoms. The influence of carbon concentration on the competition between precipitation and diffusion is discussed.

引用

页码：667 / 672

页数：5