Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

被引：0
作者：
Sung-Jin Chang
Moon Seop Hyun
Sung Myung
Min-A Kang
Jung Ho Yoo
Kyoung G. Lee
Bong Gill Choi
Youngji Cho
Gaehang Lee
Tae Jung Park
机构：
[1] Chung-Ang University,Department of Chemistry
[2] Measurement & Analysis Team,Department of Nano Bio Research
[3] National Nanofab Center,Department of Chemical Engineering
[4] Thin Film Materials Research Center,Department of Applied Science
[5] Korea Research Institute of Chemical Technology,undefined
[6] National Nanofab Center,undefined
[7] Kangwon National University,undefined
[8] Korea Maritime and Ocean University,undefined
[9] Korea Basic Science Institute,undefined
来源：
Scientific Reports | / 6卷
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摘要：
Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from RGO flakes on Cu foils up to a few hundred nanometres during CVD process, it shows appreciable improvement in structural quality. The monotonous enhancement of the structural quality of the graphene with increasing length of the graphene growth from RGO suggests that seeded CVD growth of graphene from RGO on Cu surface is accompanied by the restoration of graphitic structure. The finding provides insight into graphene growth and defect reconstruction useful for the production of tailored carbon nanostructures with required properties.
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