Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer

被引：0
作者：
J. P. B. Silva
F. L. Faita
K. Kamakshi
K. C. Sekhar
J. Agostinho Moreira
A. Almeida
M. Pereira
A. A. Pasa
M. J. M. Gomes
机构：
[1] Centre of Physics,Departamento de Física e Astronomia
[2] University of Minho,Departamento de Física
[3] IFIMUP and IN-Institute of Nanoscience and Nanotechnology,Department of Physics
[4] Faculdade de Ciências da Universidade do Porto,Department of Physics
[5] Universidade Federal de Santa Catarina,undefined
[6] Campus Trindade,undefined
[7] Madanapalle Institute of Technology & Science,undefined
[8] Central University of Tamil Nadu,undefined
来源：
Scientific Reports | / 7卷
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摘要：
An enhanced resistive switching (RS) effect is observed in Pt/BaTiO3(BTO)/ITO ferroelectric structures when a thin HfO2:Al2O3 (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt/HAO/BTO/ITO structure. It is found that the polarization reversal induces a barrier variation in the Pt/HAO/BTO interface and causes enhanced RS, which is suppressed at Curie temperature (Tc = 140 °C). Furthermore, the Pt/HAO/BTO/ITO structures show promising endurance characteristics, with a RS ratio >103 after 109 switching cycles, that make them potential candidates for resistive switching memory devices. By combining ferroelectric and dielectric layers this work provides an efficient way for developing highly efficient ferroelectric-based RS memory devices.
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