Silicon-platinum silicide schottky barriers with a highly-doped surface layer

被引：2

作者：

Voitsekhovskii A.V. ^{[1
]}

Kokhanenko A.P. ^{[1
]}

Nesmelov S.N. ^{[1
]}

Lyapunov S.I. ^{[1
]}

Komarov N.V. ^{[1
]}

机构：

[1] Siberian Physical-Technical Institute, Tomsk State University

来源：

Russian Physics Journal | 2001年 / 44卷 / 8期

关键词：

Platinum; Boron; Barrier Height; Wavelength Region; Surface Silicon;

D O I：

10.1023/A:1013691432540

中图分类号：

学科分类号：

摘要：

The spectral characteristic of infrared silicon-platinum suicide Schottky barrier photodetectors is shifted to the long wavelength region due to a highly-doped surface silicon layer produced by recoil boron implantation. The dependence of the resulting highly-doped layer parameters on high-energy boron-ion implantation regimes is studied experimentally. Energy-band diagrams and reduction of the barrier height are calculated for p-Si-PtSi structures with highly-doped surface layers produced by molecular-beam epitaxy and recoil implantation. ©2001 Plenum Publishing Corporation.

引用

页码：794 / 805

页数：11

共 22 条

[1]

Kiamata M., Tubouchi N., SPIE., pp. 293-349, (1995)

[2]

Breaiter R., Cabanski W., Koch R., Et al., Proc. SPIE, 3436, pp. 359-374, (1998)

[3]

Ivanov V.G., Panasenkov V.I., Ivanov G.V., Proc. SPIE, 3819, pp. 143-148, (1999)

[4]

Sauer P.J., Shallcross F.V., Hsueh F.L., Et al., Proc. SPIE, 1540, pp. 285-296, (1987)

[5]

Hudson L.R., Tseng H.F., Wang W.L., Proc. SPIE, 819, pp. 262-269, (1987)

[6]

Ivanov V.G., Panasenkov V.I., Ivanov G.V., Fiz. Tekh. Poluprovodn., 31, 6, pp. 735-739, (1997)

[7]

Kumar S., Boyd J.T., Jackson H.E., J. Appl. Phys., 62, 9, pp. 3848-3852, (1987)

[8]

Lahnor P., Schmiedl R., Woerle P., Et al., Proc. SPIE, 819, pp. 262-269, (1996)

[9]

Czernik A., Palm H., Cabanski W., Et al., J. Appl. Phys., A55, pp. 189-191, (1992)

[10]

Shannon J.M., Appl. Phys. Lett, 25, 1, pp. 75-77, (1974)

← 1 2 3 →