Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy

Defects and stress gradually accumulate throughout various Si large-scale integration fabrication processes. It is essential to monitor defects and stress carefully to suppress their unintentional introduction. In this study, we measured the stress and crystal quality in shallow trench isolation (STI) samples by ultraviolet (UV)-Raman spectroscopy with an extremely high-resolution wavenumber to evaluate the effect of post-annealing on the recovery of Si crystals. The variations of crystal quality in 200-mm wafers with STI structures gradually decreased after post-annealing for 4 h, 6 h, and 8 h; however, there was no substantial difference in the values of full-width at half-maximum of the Raman spectra. Precise measurements of variations of stress and crystal quality were successfully performed by UV-Raman spectroscopy with a high-resolution wavenumber, which enabled us to evaluate the STI process accurately.