Dopant activation in Sn-doped Ga2O3 investigated by X-ray absorption spectroscopy

被引：72

作者：

Siah, S. C. ^{[1
]}

Brandt, R. E. ^{[1
]}

Lim, K. ^{[2
,3
]}

Schelhas, L. T. ^{[2
]}

Jaramillo, R. ^{[1
]}

Heinemann, M. D. ^{[4
]}

Chua, D. ^{[5
]}

Wright, J. ^{[6
,7
]}

Perkins, J. D. ^{[8
]}

Segre, C. U. ^{[6
]}

Gordon, R. G. ^{[5
]}

Toney, M. F. ^{[2
]}

Buonassisi, T. ^{[1
]}

机构：

[1] MIT, 77 Massachusetts Ave, Cambridge, MA 02139 USA

[2] SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA

[3] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[4] PVcomB, Helmholtz Zentrum Berlin, D-12489 Berlin, Germany

[5] Harvard Univ, Dept Chem Mat Sci & Chem Biol, Cambridge, MA 02138 USA

[6] IIT, Dept Phys, Chicago, IL 60616 USA

[7] IIT, CSRRI, Chicago, IL 60616 USA

[8] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 25期

关键词：

ELECTRON-PARAMAGNETIC-RESONANCE; FILMS;

D O I：

10.1063/1.4938123

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Doping activity in both beta-phase (beta-) and amorphous (a-) Sn-doped gallium oxide (Ga2O3:Sn) is investigated by X-ray absorption spectroscopy (XAS). A single crystal of beta-Ga2O3:Sn grown using edge-defined film-fed growth at 1725 degrees C is compared with amorphous Ga2O3:Sn films deposited at low temperature (<300 degrees C). Our XAS analyses indicate that activated Sn dopant atoms in conductive single crystal beta-Ga2O3:Sn are present as Sn4+, preferentially substituting for Ga at the octahedral site, as predicted by theoretical calculations. In contrast, inactive Sn atoms in resistive a-Ga2O3:Sn are present in either +2 or +4 charge states depending on growth conditions. These observations suggest the importance of growing Ga2O3:Sn at high temperature to obtain a crystalline phase and controlling the oxidation state of Sn during growth to achieve dopant activation. (C) 2015 AIP Publishing LLC.

引用

页数：5

共 26 条

[1] Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide [J].