Surface-State Bipolaron Formation on a Triangular Lattice in the sp-Type Alkali-Metal/Si(111) Mott Insulator

被引:19
作者
Cardenas, L. [1 ]
Fagot-Revurat, Y. [1 ]
Moreau, L. [1 ]
Kierren, B. [1 ]
Malterre, D. [1 ]
机构
[1] Nancy Univ, CNRS, Inst Jean Lamour, UMR 7198, F-54506 Vandoeuvre Les Nancy, France
关键词
TRANSITION; INTERFACES; BEHAVIOR;
D O I
10.1103/PhysRevLett.103.046804
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report on new low-energy electron diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy studies of alkali-metal/Si(111) previously established as having a Mott-insulating ground state at surface. The observation of a strong temperature dependent Franck-Condon broadening of the surface band together with the novel root 3 X root 3 -> 2(root 3 X root 3) charge and lattice ordering below 270 K evidence a surface charge density wave in the strong electron-phonon coupling limit (g approximate to 8). Both the adiabatic ratio (h) over bar omega(0)/t approximate to 0.8 and the effective pairing energy V-eff = U - 2g (h) over bar omega(0) approximate to -800 meV are consistent with the possible formation of a bipolaronic insulating phase consisting of alternating doubly occupied and unoccupied dangling bonds as expected in the Holstein-Hubbard model.
引用
收藏
页数:4
相关论文
共 34 条
  • [1] Electron-phonon interaction at the Si(111)-7x7 surface
    Barke, I.
    Zheng, Fan
    Konicek, A. R.
    Hatch, R. C.
    Himpsel, F. J.
    [J]. PHYSICAL REVIEW LETTERS, 2006, 96 (21)
  • [2] Structure determination of the (√3 x √3) R30° boron phase on the Si(111) surface using photoelectron diffraction
    Baumgärtel, P
    Paggel, JJ
    Hasselblatt, M
    Horn, K
    Fernandez, V
    Schaff, O
    Weaver, JH
    Bradshaw, AM
    Woodruff, DP
    Rotenberg, E
    Denlinger, J
    [J]. PHYSICAL REVIEW B, 1999, 59 (20): : 13014 - 13019
  • [3] 2-DIMENSIONAL HUBBARD-HOLSTEIN MODEL
    BERGER, E
    VALASEK, P
    VONDERLINDEN, W
    [J]. PHYSICAL REVIEW B, 1995, 52 (07): : 4806 - 4814
  • [4] BRETHE M, 2006, PHYS REV LETT, V97
  • [5] Metallic Nature of the α-Sn/Ge(111) Surface down to 2.5 K
    Colonna, Stefano
    Ronci, Fabio
    Cricenti, Antonio
    Le Lay, Guy
    [J]. PHYSICAL REVIEW LETTERS, 2008, 101 (18)
  • [6] Observation of a Mott insulating ground state for Sn/Ge(111) at low temperature
    Cortés, R
    Tejeda, A
    Lobo, J
    Didiot, C
    Kierren, B
    Malterre, D
    Michel, EG
    Mascaraque, A
    [J]. PHYSICAL REVIEW LETTERS, 2006, 96 (12)
  • [7] Quantum lattice dynamical effects on single-particle excitations in one-dimensional Mott and Peierls insulators
    Fehske, H
    Wellein, G
    Hager, G
    Weisse, A
    Bishop, AR
    [J]. PHYSICAL REVIEW B, 2004, 69 (16): : 165115 - 1
  • [8] Many-body effects and the metal-insulator transition at semiconductor surfaces and interfaces
    Flores, F
    Ortega, J
    Pérez, R
    [J]. SURFACE REVIEW AND LETTERS, 1999, 6 (3-4) : 411 - 433
  • [9] ELECTRON-PHONON SYSTEMS FROM WEAK TO STRONG-COUPLING
    GOBEL, U
    ALEXANDROV, AS
    CAPELLMANN, H
    [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1994, 96 (01): : 47 - 52
  • [10] Soft phonon, dynamical fluctuations, and a reversible phase transition:: Indium chains on silicon
    González, C
    Flores, F
    Ortega, J
    [J]. PHYSICAL REVIEW LETTERS, 2006, 96 (13) : 1 - 4