CsI(Tl)/PIN diode radiation sensors were fabricated for application in various fields such as an NDT and an environmental radiation monitoring system. CsI(Tl) crystals of 11 x 11 x 21 mm(3) were processed as optical grade from a CsI(Tl) ingot and matched with PIN diodes in consideration of the light loss and the external impact. The photodiode signal is amplified by a low-noise preamplifier and a pulse shape amplifier. At room temperature, the fabricated CsI(Tl)/PIN diode radiation sensors demonstrate an energy resolution of 7.9% for 660 keV gamma rays and 4.9% for 1330 keV. The fluctuation of the directional dependency was below 14% from 0 to 90 degree for the incident 660 keV gamma rays. The compactness, the low-voltage power supply and the physical hardness are very useful features for industrial applications of the fabricated CsI(Tl)/PIN diode sensor. (C) 2009 Elsevier Ltd. All rights reserved.
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BHABHA ATOM RES CTR,CTR VARIABLE ENERGY CYCLOTRON,CALCUTTA 700064,W BENGAL,INDIABHABHA ATOM RES CTR,CTR VARIABLE ENERGY CYCLOTRON,CALCUTTA 700064,W BENGAL,INDIA
Bandyopadhyay, D
;
Basu, SK
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BHABHA ATOM RES CTR,CTR VARIABLE ENERGY CYCLOTRON,CALCUTTA 700064,W BENGAL,INDIABHABHA ATOM RES CTR,CTR VARIABLE ENERGY CYCLOTRON,CALCUTTA 700064,W BENGAL,INDIA
机构:
BHABHA ATOM RES CTR,CTR VARIABLE ENERGY CYCLOTRON,CALCUTTA 700064,W BENGAL,INDIABHABHA ATOM RES CTR,CTR VARIABLE ENERGY CYCLOTRON,CALCUTTA 700064,W BENGAL,INDIA
Bandyopadhyay, D
;
Basu, SK
论文数: 0引用数: 0
h-index: 0
机构:
BHABHA ATOM RES CTR,CTR VARIABLE ENERGY CYCLOTRON,CALCUTTA 700064,W BENGAL,INDIABHABHA ATOM RES CTR,CTR VARIABLE ENERGY CYCLOTRON,CALCUTTA 700064,W BENGAL,INDIA