A significant reduction of impurity contents in hydrogenated microcrystalline silicon films for increased grain size and reduced defect density

We have prepared high-purity hydrogenated microcrystalline silicon films (mu c-Si:H) on quartz substrates from a mixture of silane and hydrogen using a new type of ultrahigh vacuum plasma enhanced chemical vapor deposition system. In substrate temperatures ranging from 25 to 350 degrees C, we have produced high-crystallinity mu c-Si:H, as observed by Raman spectroscopy. At the highest temperature (similar to 350 degrees C), we obtain larger crystalline Si grains, similar to 1000 Angstrom, estimated using Scherrer's formula. Transmission electron microscopy micrographs show that these crystalline grains are conical and extend 7000 similar to 8000 Angstrom in the film growth direction with a lateral size of similar to 1000 Angstrom. At a mid-range temperature (similar to 200 degrees C), a spin density as low as similar to 5 x 10(15) cm(-3) and the midgap position of the Fermi level imply a substantial reduction of the density of defects states in this pure film. Moreover, this pure film is stable against prolonged light exposure. Implications of these results for the role of impurities in the growth process and optoelectric properties of mu c-Si:H are discussed.