Advances in Gunn diode technology

被引：5
作者：
Chandra, I [1 ]
Gulati, R [1 ]
Sharma, HS [1 ]
机构：
[1] Solid State Phys Lab, Delhi 110054, India
来源：
IETE TECHNICAL REVIEW | 1997年 / 14卷 / 06期
关键词：
D O I：
10.1080/02564602.1997.11416708
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Gunn diode is a simple two terminal source of low-noise, high frequency microwave power, it is most commonly used as local oscillator in critical microwave and mm-wave systems, The system requirement of frequency agility and temperature stability impose stringent demands on the device performance and hence on its material and fabrication technology, The present paper discusses some of the technological innovations attempted in this direction along with results obtained. Some of the issues addressed are carrier concentration ramping to check velocity degradation in the active layer, power optimisation by in-situ etching, minimisation of dead zone and thermal management, Physics, design and fabrication technology and testing of Gunn diodes is also briefly described in this article.
引用
收藏
页码：443 / 449
页数：7
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