Realization of a self-powered ZnO MSM UV photodetector with high responsivity using an asymmetric pair of Au electrodes

被引：186

作者：

Chen, Hong-Yu ^{[1
,2
,3
]}

Liu, Ke-Wei ^{[1
]}

Chen, Xing ^{[1
]}

Zhang, Zhen-Zhong ^{[1
]}

Fan, Ming-Ming ^{[1
]}

Jiang, Ming-Ming ^{[1
,2
]}

Xie, Xiu-Hua ^{[1
,2
]}

Zhao, Hai-Feng ^{[1
]}

Shen, De-Zhen ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China

[2] Grad Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2014年 / 2卷 / 45期

基金：

中国国家自然科学基金;

关键词：

ULTRAVIOLET PHOTODETECTOR; SCHOTTKY JUNCTION; DETECTOR; ARRAY; FILM;

D O I：

10.1039/c4tc01839g

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate a novel type of ZnO self-powered photodetector based on the asymmetric metal-semiconductor-metal (MSM) structure: one Au interdigitated electrode with wide fingers and the other one with narrow fingers. These ZnO photodetectors exhibit attractive photovoltaic characteristics at 0 V bias. More interestingly, with increasing the asymmetric ratio (the width of wide fingers : the width of narrow fingers) of the interdigitated electrodes, the responsivity of the ZnO self-powered UV photodetectors was enhanced obviously, reaching as high as 20 mA W-1 when the asymmetric ratio was 20 : 1. A physical model based on band energy theory was developed to illustrate the origin of the photoresponse at 0 V in our device. Our findings provide a new route to realizing self-powered photodetectors.

引用

页码：9689 / 9694

页数：6

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