High-temperature thermal stability performance in δ-doped In0.425Al0.575As-In0.65Ga0.35As metamorphic HEMT

被引：23
作者：
Hsu, WC [1 ]
Chen, YJ
Lee, CS
Wang, TB
Lin, YS
Wu, CL
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan
[2] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan
[3] Natl Dong Hwa Univ, Dept Mat Sci & Engn, Eugene, OR 97401 USA
[4] Transcom Inc, Hsinchu 744, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 02期
关键词：
high-temperature; metamorphic; metamorphic high-electron mobility transistor (MHEMT); thermal stability;
D O I：
10.1109/LED.2004.841447
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report, to our knowledge, the best high-temperature characteristics and thermal stability of a novel delta-doped In0.425Al0.575As-In0.65Ga0.35As-GaAs metamorphic high-electron mobility transistor. High-temperature device characteristics, including extrinsic transconductance (g(m)), drain saturation current density (I-DSS), on/off-state breakdown voltages (BVon/BVGD), turn-on voltage (V-on), and the gate-voltage swing have been extensively investigated for the gate dimensions of 0.65 x 200 mum(2). The cutoff frequency (fT) and maximum oscillation frequency (f(max))9 at 300 K, are 55.4 and 77.5 GHz at V-DS = 2 V, respectively. Moreover, the distinguished positive thermal threshold coefficient (partial derivativeV(th)/partial derivativeT) is superiorly as low as to 0.45 mV/K.
引用
收藏
页码：59 / 61
页数：3
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