Circuit simulation of threshold-voltage degradation in a-Si:H TFTs fabricated at 175 °C

被引：15
|
作者：
Shringarpure, Rahul [1 ]
Venugopal, Sameer
Li, Zi
Clark, Lawrence T.
Allee, David R.
Bawolek, Edward
Toy, Daniel
机构：
[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[2] Arizona State Univ, Flexible Display Ctr, Tempe, AZ 85284 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 07期
关键词：
circuit simulation; display technology; hydrogenated amorphous silicon thin-film transistor (a-Si : TFT); SPICE; threshold-voltage degradation;
D O I：
10.1109/TED.2007.899667
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This brief presents a novel approach to modeling gate bias-induced threshold-voltage (V-th) degradation in hydrogenated amorphous silicon thin-film transistors (TFTs). The V-th degradation model is added to the SPICE 3.0 TFT device model to obtain a composite model and is verified by comparing the simulated Vth shift with measured data in a TFT latch circuit.
引用
收藏
页码：1781 / 1783
页数：3
相关论文
共 50 条
  • [21] The effect of passivation materials on electrical performances of a-Si:H TFTs fabricated on a metal foil
    Park, S. Y.
    Choi, N. B.
    Han, Chang-wook
    Kang, In-Byeong
    IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2007, : 1955 - 1958
  • [22] Electrical response to uniaxial tensile strain of a-Si:H TFTs fabricated on polyimide foils
    Gleskova, Helena
    Wagner, Sigurd
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (19-25) : 2627 - 2631
  • [23] Current degradation of a-Si:H/SiN TFTs at room temperature and low voltages
    Merticaru, Andreea R.
    Mouthaan, Anton J.
    Kuper, Fred G.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (09) : 2273 - 2279
  • [24] A novel pixel circuit compensating for poly-Si threshold-voltage shift and degradation of OLED for emi-flective display
    Lin, Kun-Yueh
    Yang, Bo-Ru
    Shieh, Han-Ping D.
    IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007, 2007, : 201 - +
  • [25] Comparisons of a-Si:H TFTs on glass and plastic substrate at 160°C
    Cheng, Chun-Cheng
    Wang, Liang-Tang
    He, Jin-Yuan
    Wu, Yung-Fu
    Yeh, Yung-Hui
    IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2, 2005, : 1195 - 1198
  • [26] Passivation of defects in a-Si:H TFTs with 150°C supercritical fluids
    Yang, Po-Yu
    Liu, Po-Tsun
    Chang, Ting-Chang
    Cheng, Yi-Li
    IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007, 2007, : 500 - +
  • [27] Fabrication of a-Si:H TFTs at 120°C on flexible polyimide substrates
    Sazonov, A
    Nathan, A
    Murthy, RVR
    Chamberlain, SG
    FLAT-PANEL DISPLAYS AND SENSORS: PRINCIPLES, MATERIALS AND PROCESSES, 2000, 558 : 375 - 380
  • [28] A New AMOLED Pixel Circuit Employing a-Si: H TFTs for High Aperture Ratio
    Shin, Hee-Sun
    Lee, Jae-Hoon
    Jung, Sang-Hoon
    Kim, Chang-Yeon
    Han, Min-Koo
    JOURNAL OF INFORMATION DISPLAY, 2005, 6 (02) : 12 - 15
  • [29] Temperature instability of low-temperature deposited a-Si:H TFTs fabricated on plastic substrate
    Ho, K. Y.
    Cheng, C. H.
    Cheng, C. C.
    Chen, P. C.
    Yeh, Y. H.
    JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2008, 16 (06) : 683 - 689
  • [30] Dependence of Threshold Voltage of a-Si:H TFT on a-SiNx:H Film
    XIONG Zhibin
    SemiconductorPhotonicsandTechnology, 1997, (04) : 50 - 55
12345