Photoinduced lens dynamics near the optical confinement threshold in extrinsic semiconductors

被引：4

作者：

Sidorov, AI ^{[1
]}

机构：

[1] Inst Laser Phys, St Petersburg, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2003年 / 29卷 / 04期

关键词：

Impurity Level; Spatial Dynamic; Axial Profile; Deep Impurity; Optical Confinement;

D O I：

10.1134/1.1573297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spatial dynamics of a negative photoinduced lens in a semiconductor with deep impurity levels has been numerically modeled. A relation between the axial profile of the dynamic lens and the onset of self-defocusing leading to the optical confinement. (C) 2003 MAIK "Nauka / Interperiodica".

引用

页码：300 / 301

页数：2

共 9 条

[1]

ANANEV YA, 1990, OPTICAL CAVITIES LAS

[2]

BAGROV IV, 2002, OPT ZH, V69, P15

[3] OPTICAL LIMITING IN GAAS [J].

BOGGESS, TF ;

SMIRL, AL ;

MOSS, SC ;

BOYD, IW ;

VANSTRYLAND, EW .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (05) :488-494

[4]

GONCHARENKO AM, 1977, GAUSSIAN LIGHT BEAMS

[5]

Hollins R. C., 2001, Nonlinear Optics, Principles, Materials, Phenomena, and Devices, V27, P1

[6] NONLINEAR REFRACTION AND OPTICAL LIMITING IN THICK MEDIA [J].

SHEIKBAHAE, M ;

SAID, AA ;

HAGAN, DJ ;

SOILEAU, MJ ;

VANSTRYLAND, EW .

OPTICAL ENGINEERING, 1991, 30 (08) :1228-1235

[7]

SIDOROV AI, 2002, OPT ZH, V69, P7

[8]

Swalen J. D., 2001, Nonlinear Optics, Principles, Materials, Phenomena, and Devices, V27, P13

[9]

VANSTRYLAND EW, 1988, J OPT SOC AM B, V5, P1980, DOI 10.1364/JOSAB.5.001980

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