Mass-separated broad beam ion implantation of 25 keV N+ in titanium

A very compact arrangement consisting of a broad beam ion source (Kaufman ion source) followed by a newly developed radio-frequency bandpass mass separator, was used to generate a mass-separated broad ion beam with an ion energy of 500 eV. After this a second ion acceleration to 25 keV was carried out at the gap to the substrate, combined with a defined broadening of the diameter of the ion beam. A titanium layer of 300 nm thickness on a silicon substrate was implanted with N+ at a dose range of 10(15)-5 x 10(17) cm(-2). Rutherford backscattering and thermal waves analyses showed the implanted depth profiles. (C) 1997 Elsevier Science S.A.