A Solvothermal Synthetic Environmental Design for High-Performance SnSe-Based Thermoelectric Materials

被引:133
作者
Shi, Xiao-Lei [1 ]
Liu, Wei-Di [2 ]
Li, Meng [3 ]
Sun, Qiang [4 ]
Xu, Sheng-Duo [3 ]
Du, Du [3 ]
Zou, Jin [3 ,4 ]
Chen, Zhi-Gang [1 ]
机构
[1] Queensland Univ Technol, Sch Chem & Phys, Brisbane, Qld 4000, Australia
[2] Univ Queensland, Australian Inst Bioengn & Nanotechnol, Brisbane, Qld 4072, Australia
[3] Univ Queensland, Sch Mech & Min Engn, Brisbane, Qld 4072, Australia
[4] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia
基金
澳大利亚研究理事会;
关键词
devices; SnSe; solvothermal; thermoelectric; vacancies; MECHANICAL-PROPERTIES; THERMAL-CONDUCTIVITY; POLYCRYSTALLINE SNSE; FIGURE; MERIT; GENERATION; TRANSPORT; ALLOY; GETE;
D O I
10.1002/aenm.202200670
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
SnSe is challenging to use in thermoelectric devices due to difficulties in simultaneously optimizing its thermoelectric and mechanical properties. Here, the authors show a unique solvothermal synthetic environmental design to fabricate super-large and micro/nanoporous Sn0.965Se microplates by using CrCl3. Cl- ions to trigger Sn-vacancy formation and optimize the hole concentration to approximate to 3 x 10(19) cm(-3), while the as-formed Cr(OH)(3) colloidal precipitations act as "templates" to achieve micro/nanoporous features, leading to low lattice thermal conductivity of approximate to 0.2 W m(-1) K-1 in the as-sintered polycrystal, contributing to a high ZT of approximate to 2.4 at 823 K and an average ZT of approximate to 1.1. Of particular note, the polycrystal exhibits high hardness (approximate to 2.26 GPa) and compression strength (approximate to 109 MPa), strengthened by grain refinement and vacancy-induced lattice distortions and dislocations; while a single-leg device provides a stable output power (>100 mW) and conversion efficiency of approximate to 10% by a temperature difference of 425 K, indicating great potential for applying to practical thermoelectric devices.
引用
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页数:10
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