The growth of Pd thin films on a 6H-SiC(0001) substrate

被引：9
|
作者：
Tsiaoussis, I.
Frangis, N. [1 ]
Manolikas, C.
Tan, T. A. Nguyen
机构：
[1] Aristotle Univ Thessaloniki, Dept Phys, Solid State Phys Sect, GR-54124 Thessaloniki, Greece
[2] CNRS, LEPES, F-38042 Grenoble 9, France
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 300卷 / 02期
关键词：
microscopy; twins; epitaxy; Pd; SiC; metallic contacts;
D O I：
10.1016/j.jcrysgro.2006.12.036
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Pd thin films, grown on Si-rich 6H-SiC(0 0 0 1) substrates, were studied by atomic force microscopy, electron diffraction and high-resolution transmission electron microscopy. It is concluded that the growth is successful only when all the growth process takes place at room temperature. Under these conditions a very good epitaxial growth of Pd is achieved, despite the large misfit (about 8.6%) between Pd and the substrate and the existence of a semi-amorphous layer between the thin film and the substrate. A large number of twins appear in these films. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：368 / 373
页数：6
相关论文
共 50 条
  • [1] Growth of thin zirconium oxide films on the 6H-SiC(0001) surface
    Idczak, K.
    Mazur, P.
    Markowski, L.
    Skiscim, M.
    Musial, M.
    APPLIED SURFACE SCIENCE, 2012, 258 (21) : 8349 - 8353
  • [2] Oxygen Influence on the Growth of Thin Hf Films on the 6H-SiC(0001) Surfaces
    Mazur, Piotr
    Markowski, Leszek
    SURFACE AND INTERFACE ANALYSIS, 2010, 42 (10-11) : 1561 - 1565
  • [3] Effect of substrate temperature on the growth of 6H-SiC thin films on Al2O3 (0001) surface
    Liu, Zhongliang
    Kang, Chaoyang
    Tang, Jun
    Xu, Pengshou
    Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society, 2011, 39 (02): : 306 - 311
  • [4] AFM/STM Modification of Thin Sb Films on 6H-SiC(0001)
    Mazur, P.
    Zuber, S.
    Grodzicki, M.
    Ciszewski, A.
    ACTA PHYSICA POLONICA A, 2014, 126 (05) : 1131 - 1133
  • [5] Thermal stability of LiF thin films on 6H-SiC(0001) surface
    Mazur, Piotr
    Markowski, Leszek
    Grodzicki, Milosz
    VACUUM, 2009, 84 (05) : 622 - 624
  • [6] Nucleation and growth behavior during initial stage in sublimation epitaxy of SiC films on 6H-SiC(0001) substrate
    Seo, SH
    Song, JS
    Oh, MH
    Park, JS
    Wang, YZ
    THIN SOLID FILMS, 2004, 469 : 149 - 153
  • [7] Crystal growth of 3C-SiC polytype on 6H-SiC(0001) substrate
    Diani, M
    Simon, L
    Kubler, L
    Aubel, D
    Matko, I
    Chenevier, B
    Madar, R
    Audier, M
    JOURNAL OF CRYSTAL GROWTH, 2002, 235 (1-4) : 95 - 102
  • [8] GROWTH OF HIGH-QUALITY 6H-SIC EPITAXIAL-FILMS ON VICINAL (0001) 6H-SIC WAFERS
    POWELL, JA
    LARKIN, DJ
    MATUS, LG
    CHOYKE, WJ
    BRADSHAW, JL
    HENDERSON, L
    YOGANATHAN, M
    YANG, J
    PIROUZ, P
    APPLIED PHYSICS LETTERS, 1990, 56 (15) : 1442 - 1444
  • [9] Lattice parameter measurements of 3C-SiC thin films grown on 6H-SiC(0001) substrate crystals
    Kräusslich, J
    Bauer, A
    Wunderlich, B
    Goetz, K
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 319 - 322
  • [10] Initial stages of growth of SiC and AlN thin films on vicinal and on-axis surfaces of 6H-SiC(0001)
    Davis, RF
    Tanaka, S
    Kern, RS
    Xu, J
    Wendelken, JF
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 133 - 136
12345