Demonstration of first 9.2 kV 4H-SiC bipolar junction transistor

被引：32
作者：
Zhang, J
Zhao, JH
Alexandrov, P
Burke, T
机构：
[1] Rutgers State Univ, Dept ECE, Piscataway, NJ 08854 USA
[2] United Silicon Carbide Inc, New Brunswick Tech Ctr, New Brunswick, NJ 08901 USA
[3] USA, TACOM, Warren, MI 48397 USA
来源：
ELECTRONICS LETTERS | 2004年 / 40卷 / 21期
关键词：
D O I：
10.1049/el:20046223
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first demonstration is reported of a high-voltage (9.2 kV) 4H-SiC bipolar junction transistor (BJT) based on a 50 mum, 7 x 10(14) cm(-3) doped drift layer, achieving an emitter current density of 150 A/cm(2) at V-CEO = 5 V, suggesting a specific on-resistance (R-SP_ON) of 33 mOmega cm(2) without considering current spreading or 49 mOmega cm(2) if current spreading is considered. The result far exceeds the previous 4H-SiC BJT record of 3.2 kV with R-SP_ON = 78 MOmega cm(2).
引用
收藏
页码：1381 / 1383
页数：3
相关论文
共 11 条
[1]   Large area, 1.3 kV, 17 A, bipolar junction transistors in 4H-SiC [J].
Agarwal, AK ;
Ryu, SH ;
Richmond, J ;
Capell, C ;
Palmour, JW ;
Tang, Y ;
Balachandran, S ;
Chow, TP .
ISPSD'03: 2003 IEEE 15TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS PROCEEDINGS, 2003, :135-138
[2]  
Huang CF, 2002, PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P57
[3]   Development of Ni/Al and MUM ohmic contact materials for p-type 4H-SiC [J].
Konishi, R ;
Yasukochi, R ;
Nakatsuka, O ;
Koide, Y ;
Moriyama, M ;
Murakami, M .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 98 (03) :286-293
[4]   Multistep junction termination extension for SiC power devices [J].
Li, X ;
Tone, K ;
Fursin, L ;
Zhao, JH ;
Burke, T ;
Alexandrov, P ;
Pan, M ;
Weiner, M .
ELECTRONICS LETTERS, 2001, 37 (06) :392-393
[5]   Demonstration of 4H-SiC power bipolar junction transistors [J].
Luo, Y ;
Fursin, L ;
Zhao, JH .
ELECTRONICS LETTERS, 2000, 36 (17) :1496-1497
[6]   High voltage (>1 kV) and high current gain (32) 4H-SiC power BJTs using Al-free ohmic contact to the base [J].
Luo, YB ;
Zhang, JH ;
Alexandrov, P ;
Fursin, L ;
Zhao, JH ;
Burke, T .
IEEE ELECTRON DEVICE LETTERS, 2003, 24 (11) :695-697
[7]   Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC [J].
Raghunathan, R ;
Baliga, BJ .
SOLID-STATE ELECTRONICS, 1999, 43 (02) :199-211
[8]   1800 V NPN bipolar junction transistors in 4H-SiC [J].
Ryu, SH ;
Agarwal, AK ;
Singh, R ;
Palmour, JW .
IEEE ELECTRON DEVICE LETTERS, 2001, 22 (03) :124-126
[9]   High power(500V-70A) and high gain(44-47) 4H-SiC bipolar junction transistors [J].
Zhang, J ;
Alexandrov, P ;
Zhao, JH .
SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 :1149-1152
[10]   A high current gain 4H-SiC NPN power bipolar junction transistor [J].
Zhang, JH ;
Luo, YB ;
Alexandrov, P ;
Fursin, L ;
Zhao, JH .
IEEE ELECTRON DEVICE LETTERS, 2003, 24 (05) :327-329
12