Critical film thickness dependence on As flux in In0.27Ga0.73As/GaAs(001) films

被引：9
|
作者：
Riposan, A. [1 ]
Millunchick, J. Mirecki
Pearson, Chris
机构：
[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Dept Comp Sci Engn Sci & Phys, Flint, MI 48502 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 09期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2476259
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The transition between planar and nonplanar growth is examined for compressively strained In0.27Ga0.73As/GaAs(001) films using reflection high energy electron diffraction, atomic force microscopy, and scanning tunneling microscopy (STM). For a narrow range of temperature and composition, the critical thickness (t(SK)) is strongly dependent on As flux. For high values of As flux, t(SK) increases by more than a factor of 2. The morphology of three-dimensional islands formed during the initial stages of nonplanar growth is also characterized by high resolution STM.(c) 2007 American Institute of Physics.
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页数：3
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