A 2D analytical model for SCEs in MOSFETs with high-k gate dielectric

被引：15

作者：

Xie, Qian ^{[1
]}

Xu, Jun ^{[1
]}

Ren, Tianling ^{[1
]}

Taur, Yuan ^{[2
]}

机构：

[1] Tsinghua Univ, Tsinghua Natl Lab Informat Sci & Technol, Inst Microelect, Beijing 100084, Peoples R China

[2] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2010年 / 25卷 / 03期

基金：

中国国家自然科学基金;

关键词：

SHORT-CHANNEL;

D O I：

10.1088/0268-1242/25/3/035012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a two-dimensional (2D) analytical potential model for MOSFETs with high-k gate dielectric is derived based on solving a boundary value problem with 2D Poisson's equation. A novel approach to estimate short-channel threshold voltage (V-T) roll-off analytically is also presented and an explicit expression for the short-channel V-T roll-off is obtained. Results show that the minimum surface potential along the channel, the inverse slope of subthreshold current, short-channel V-T roll-off and drain-induced barrier lowering (DIBL) predicted by the analytical model are in close agreement with 2D numerical simulation (TCAD Sentaurus) without any fitting parameters even down to a sub-20 nm channel length. This model offers a physical insight into short-channel effects and how each of the parameters of a MOSFET quantitatively impacts on Delta V-T and other key features of the device. It also serves for compact modeling of high-k gate dielectric MOSFETs.

引用

页数：7

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