Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells

被引：923

作者：

Ramanathan, K ^{[1
]}

Contreras, MA ^{[1
]}

Perkins, CL ^{[1
]}

Asher, S ^{[1
]}

Hasoon, FS ^{[1
]}

Keane, J ^{[1
]}

Young, D ^{[1
]}

Romero, M ^{[1
]}

Metzger, W ^{[1
]}

Noufi, R ^{[1
]}

Ward, J ^{[1
]}

Duda, A ^{[1
]}

机构：

[1] NREL, Golden, CO 80401 USA

来源：

PROGRESS IN PHOTOVOLTAICS | 2003年 / 11卷 / 04期

关键词：

copper indium gallium selenide; Cu(In; Ga)Se-2; ternary chalcopyrite; thin film solar cells; three stage process; photovoltaics; solar conversion efficiency;

D O I：

10.1002/pip.494

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We report the growth and characterization of record-efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells. Conversion efficiencies exceeding 19% have been achieved for the first time, and this result indicates that the 20% goal is within reach. Details of the experimental procedures are provided, and material and device characterization data are presented. Published in 2003 by John Wiley Sons, Ltd.

引用

页码：225 / 230

页数：6

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