Eutectic phase behavior induced by a simple additive contributes to efficient organic solar cells

被引:131
作者
Fu, Jiehao [1 ,2 ]
Chen, Haiyan [1 ]
Huang, Peihao [1 ]
Yu, Qingqing [1 ]
Tang, Hua [1 ]
Chen, Shanshan [3 ]
Jung, Sungwoo [4 ]
Sun, Kuan [3 ]
Yang, Changduk [4 ]
Lu, Shirong [1 ]
Kan, Zhipeng [1 ]
Xiao, Zeyun [1 ]
Li, Gang [2 ]
机构
[1] Chinese Acad Sci, Univ Chinese Acad Sci UCAS Chongqing, Chongqing Inst Green & Intelligent Technol, Thin Film Solar Cell Technol Res Ctr,Chongqing Sc, Chongqing 400714, Peoples R China
[2] Hong Kong Polytech Univ, Dept Elect & Informat Engn, Hung Hum, Kowloon, Hong Kong, Peoples R China
[3] Chongqing Univ, Sch Energy & Power Engn, Key Lab Lowgrade Energy Utilizat Technol & Syst, CQU NUS Renewable Energy Mat & Devices Joint La, Chongqing 400044, Peoples R China
[4] Ulsan Natl Inst Sci & Technol UNIST, Low Dimens Carbon Mat Ctr, Sch Energy & Chem Engn, Dept Energy Engn,Perovtron Res Ctr, 50 UNIST Gil, Ulsan 44919, South Korea
基金
中国国家自然科学基金;
关键词
Organic solar cells; Non-fullerene acceptor; Additive; Eutectic phase; PERFORMANCE; ACCEPTOR;
D O I
10.1016/j.nanoen.2021.105862
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Introducing a small amount of high boiling point solvent additive has been widely regarded as a feasible method to optimize the active layer morphology of organic solar cells (OSCs). However, current additives are initially developed for fullerene based OSCs and the development of additive engineering is lagging behind the development of non-fullerene acceptor based OSCs. Here, a simple and versatile solid additive, 1,4-diiodobenzene (DIB), is introduced to the non-fullerene OSCs. Due to the formation of a eutectic phase between the additive and the non-fullerene acceptor, a desired microstructure with tighter molecular stacking and more ordered molecular arrangement is achieved. As a result, DIB treated OSCs display significantly enhanced performance with a power conversion efficiency (PCE) of 17.72% for ternary device, 17.36% for binary device and 15.03% for thick-film (300 nm) device. Additional advantages of the DIB treatment include excellent device stability, toleration of a wide additive concentration range, and versatility in both polymer and small molecule OSCs. The results highlight the importance of additive engineering in high-performance OSCs and demonstrate the significance of supramolecular interactions.
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页数:8
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